Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions
Identifieur interne : 017C50 ( Main/Repository ); précédent : 017C49; suivant : 017C51Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions
Auteurs : RBID : Pascal:97-0574814Descripteurs français
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- 6865, 7340L, 6855L, 8115H, 6835D, 6172N, 8105D, Etude expérimentale, Zinc composé, Hétérojonction semiconducteur, Couche épitaxique semiconductrice, Epitaxie jet moléculaire, Défaut empilement, Structure interface, Semiconducteur II-VI, Superréseau semiconducteur, Semiconducteur III-V, Gallium arséniure, Indium composé, Croissance semiconducteur.
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Abstract
We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecular beam epitaxy, the II/VI flux ratio employed during the early stages of II-VI growth can be used to control the local interface composition and the band alignment. Here we demonstrate that the local interface composition in pseudomorphic, strained ZnSe/GaAs(001) heterostructures as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures also have a dramatic effect on the nucleation of native stacking fault defects. Such extended defects have been associated with the early degradation of blue-green lasers. We found, in particular, that Se-rich interfaces consistently exhibited a density of Shockley stacking fault pairs below our detection limit and three to four orders of magnitude lower than those encountered at interfaces fabricated in Zn-rich conditions. © 1997 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In<sub>0.04</sub>Ga<sub>0.96</sub>As(001) heterojunctions</title><author><name sortKey="Heun, S" uniqKey="Heun S">S. Heun</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">Italie</country><wicri:regionArea>Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste</wicri:regionArea><wicri:noRegion>I-34012 Trieste</wicri:noRegion></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Minnesota</region></placeName><wicri:cityArea>Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis</wicri:cityArea></affiliation></author><author><name sortKey="Paggel, J J" uniqKey="Paggel J">J. J. Paggel</name></author><author><name sortKey="Sorba, L" uniqKey="Sorba L">L. Sorba</name></author><author><name sortKey="Rubini, S" uniqKey="Rubini S">S. Rubini</name></author><author><name sortKey="Franciosi, A" uniqKey="Franciosi A">A. Franciosi</name></author><author><name sortKey="Bonard, J M" uniqKey="Bonard J">J.-M. Bonard</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institut de Micro- et Optoelectronique, Departement de Physique, Ecole Polytechnique Federale, CH-1015 Lausanne, Switzerland</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Suisse</country><wicri:regionArea>Institut de Micro- et Optoelectronique, Departement de Physique, Ecole Polytechnique Federale, CH-1015 Lausanne</wicri:regionArea><wicri:noRegion>CH-1015 Lausanne</wicri:noRegion></affiliation></author><author><name sortKey="Ganiere, J D" uniqKey="Ganiere J">J.-D. Ganiere</name></author></titleStmt><publicationStmt><idno type="inist">97-0574814</idno><date when="1997-07">1997-07</date><idno type="stanalyst">PASCAL 97-0574814 AIP</idno><idno type="RBID">Pascal:97-0574814</idno><idno type="wicri:Area/Main/Corpus">018162</idno><idno type="wicri:Area/Main/Repository">017C50</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>II-VI semiconductors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface structure</term><term>Molecular beam epitaxy</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Semiconductor heterojunctions</term><term>Semiconductor superlattices</term><term>Stacking faults</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865</term><term>7340L</term><term>6855L</term><term>8115H</term><term>6835D</term><term>6172N</term><term>8105D</term><term>Etude expérimentale</term><term>Zinc composé</term><term>Hétérojonction semiconducteur</term><term>Couche épitaxique semiconductrice</term><term>Epitaxie jet moléculaire</term><term>Défaut empilement</term><term>Structure interface</term><term>Semiconducteur II-VI</term><term>Superréseau semiconducteur</term><term>Semiconducteur III-V</term><term>Gallium arséniure</term><term>Indium composé</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecular beam epitaxy, the II/VI flux ratio employed during the early stages of II-VI growth can be used to control the local interface composition and the band alignment. Here we demonstrate that the local interface composition in pseudomorphic, strained ZnSe/GaAs(001) heterostructures as well as lattice-matched ZnSe/In<sub>0.04</sub>Ga<sub>0.96</sub>As(001) heterostructures also have a dramatic effect on the nucleation of native stacking fault defects. Such extended defects have been associated with the early degradation of blue-green lasers. We found, in particular, that Se-rich interfaces consistently exhibited a density of Shockley stacking fault pairs below our detection limit and three to four orders of magnitude lower than those encountered at interfaces fabricated in Zn-rich conditions. © 1997 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>15</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In<sub>0.04</sub>Ga<sub>0.96</sub>As(001) heterojunctions</s1></fA08><fA11 i1="01" i2="1"><s1>HEUN (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>PAGGEL (J. 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